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Ordering number : ENA0262
CPH6002
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
CPH6002
Features
* * *
High-Frequency Medium-Power Amplifier Applications
High fT (fT=3.0GHz typ). Large current (IC=200mA). Large collector dissipation (800mW max).
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 40 30 2 200 800 150 --55 to +150 Unit V V V mA mW C C
Electrical Characteristics at Ta=25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Reverse Transfer Capacitance Symbol ICBO IEBO hFE fT Cob Cre Conditions VCB=20V, IE=0A VEB=1V, IC=0A VCE=5V, IC=50mA VCE=5V, IC=50mA VCB=5V, f=1MHz VCB=5V, f=1MHz Ratings min typ max 1.0 5.0 100 3.0 2.7 1.9 200 GHz pF pF Unit A A
Marking : GB
Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70306 / 42806AB MS IM TB-00002247 No. A0262-1/3
CPH6002
Package Dimensions
unit : mm 7018-002
0.4
0.15
6
5
4
0.6 0.2 2.8
1
0.95
2
2.9
3
0.6
1.6
0.05
0.7
1 : Collector 2 : Collector 3 : Base 4 : Emitter 5 : Collector 6 : Collector SANYO : CPH6
0.2 0.9
90 80
IC -- VCE
A 500
160 140
hFE -- IC
VCE=5V
Collector Current, IC -- mA
70 60 50 40
300A
DC Current Gain, hFE
20 25 IT10484
400
A
120 100 80 60 40 20
200A
30 20 10 0 0 5 10 15
100A
IB=0A Collector-to-Emitter Voltage, VCE -- V
0 1.0
2
3
5 7 10
2
3
5 7 100
2
3
Collector Current, IC -- mA
25
600
VCE(sat) -- IC
S21e2 -- IC
5 7 1000 IT10485
IC / IB=10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV
500
VCE=5V
Forward Transfer Gain, S21e2 -- dB
20
f=200M
Hz
400
15
300
500MHz
10
200
100
5
0 1.0
2
3
5 7 10
2
3
5 7 100
2
3
Collector Current, IC -- mA
5 7 1000 IT10486
0 1.0
2
3
5
7
10
2
3
5
7 100
2
3
Collector Current, IC -- mA
IT10487
No. A0262-2/3
CPH6002
Output Capacitance, Reverse Transfer Capacitance, Cob, Cre -- pF
7 5
f T -- IC
VCE=5V
6
Cob, Cre -- VCB
f=1MHz
Gain-Bandwidth Product, f T -- GHz
3 2
5
4
1.0 7 5 3 2
3
Cob Cre
2
1
0 1.0
2
3
5
7
10
2
3
5
7 100
2
3
0 1.0
2
3
5
7
10
2
3
5 IT10489
Collector Current, IC -- mA
1.2
IT10488
PC -- Ta
Collector-to-Base Voltage, VCB -- V
Collector Dissipation, PC -- W
0.8
M
ou
nte
0.6
do
na
ce
ram
ic
0.4
bo
ard
(9
00
mm
2
0.2
!0
.8m
m)
140 160
0 0 20 40 60 80 100 120
Ambient Temperature, Ta -- C
IT10490
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of April, 2006. Specifications and information herein are subject to change without notice.
PS No. A0262-3/3

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